PART |
Description |
Maker |
CY7C1561KV18 CY7C1561KV18-400BZC CY7C1561KV18-400B |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.29 ns, PBGA165 72-Mbit QDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
|
CY7C1310CV18-167BZXC CY7C1314CV18-167BZI CY7C1314C |
18-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 8 QDR SRAM, 0.5 ns, PBGA165 18-Mbit QDR-IISRAM 2-Word Burst Architecture 512K X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1514V18 CY7C1514V18-200BZC CY7C1514V18-250BZC |
72-Mbit QDR-II?SRAM 2-Word Burst Architecture 72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture 72-MBIT QDR-II⒙ SRAM 2-WORD BURST ARCHITECTURE 72-Mbit QDR-II SRAM 2-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR-II SRAM 4-Word Burst Architecture 36-Mbit QDR-II SRAM 2-Word Burst Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Flow-through SRAM with NoBL Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM 256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc. Electronic Theatre Controls, Inc.
|
CY7C1510AV18-200BZC CY7C1510AV18-200BZI CY7C1510AV |
72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
Y5-12-12 Y5-12-15 Y5-12-5 Y5-12S15 Y5-12S5 |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 256K (32K x 8) Static RAM 16K/32K/64K/128K x 9 Low-Voltage Deep Sync™ FIFOs 模拟IC 72-Mbit QDR-II™ SRAM 2-Word Burst Architecture USB LOW SPEED, 3 ENDPOINT, ENCORE II, 16-SOIC
|
东电?中国)投资有限公司
|
CY7C1412V18-200BZCES CY7C1414V18-200BZCES CY7C1410 |
36-Mbit QDR-II SRAM 2-Word Burst Architecture 36-Mbit QDR-II SRAM 2-Word Burst Architecture 36-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1525AV18-167BZC CY7C1525AV18-167BZI CY7C1525AV |
72-Mbit QDR-II垄芒 SRAM 2-Word Burst Architecture 72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit QDR-II?SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C4121KV13 CY7C4141KV13 CY7C4121KV13-600FCXC CY7 |
144-Mbit QDR?IV HP SRAM
|
Cypress Semiconductor
|
HM66AQB18204BP-30 |
36 MBit QDR II SRAM 4 Word Burst
|
Renesas Technology / Hitachi Semiconductor
|
CY7C1313CV18 CY7C1311CV18-250BZC CY7C1313CV18-250B |
18-Mbit QDR? II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
R1Q3A3636ABG-60R R1Q3A3609 R1Q3A3609ABG-30R R1Q3A3 |
36-Mbit QDRII SRAM 4-word Burst
|
RENESAS[Renesas Electronics Corporation]
|